Transistor design for use in advanced nanometer flash memory devices

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US09747986B2 Transistor design for use in advanced nanometer flash memory devices 有权

Patent Title: Transistor design for use in advanced nanometer flash memory devices
Application No.: US15003811

Application Date: 2016-01-22
Publication No.: US09747986B2

Publication Date: 2017-08-29
Inventor: Hieu Van Tran , Hung Quoc Nguyen , Anh Ly , Thuan Vu
Applicant: Silicon Storage Technology, Inc.
Applicant Address: US CA San Jose
Assignee: Silicon Storage Technology, Inc.
Current Assignee: Silicon Storage Technology, Inc.
Current Assignee Address: US CA San Jose
Agency: DLA Piper LLP (US)
Main IPC: G06F17/50
IPC: G06F17/50 ; G11C16/08 ; G11C11/16 ; G11C13/00 ; G11C16/28

Abstract:

Improved PMOS and NMOS transistor designs for sensing circuitry use in advanced nanometer flash memory devices are disclosed.

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