Invention Grant
- Patent Title: Dual-sided silicon integrated passive devices
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Application No.: US15057588Application Date: 2016-03-01
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Publication No.: US09748227B2Publication Date: 2017-08-29
- Inventor: Jun Zhai , Vidhya Ramachandran , Kunzhong Hu , Mengzhi Pang , Chonghua Zhong
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Agent Neal E. Persky; Lawrence J. Merkel
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L27/06 ; H01L21/77 ; H01L49/02

Abstract:
In some embodiments, a system may include an integrated circuit. The integrated circuit may include a substrate including a first surface, a second surface substantially opposite of the first surface, and a first set of electrical conductors coupled to the first surface. The first set of electrical conductors may function to electrically connect the integrated circuit to a circuit board. The integrated circuit may include a semiconductor die coupled to the second surface of the substrate using a second set of electrical conductors. The integrated circuit may include a passive device dimensioned to be integrated with the integrated circuit. The passive device may be positioned between the second surface and at least one of the first set of electrical conductors. The die may be electrically connected to a second side of the passive device. A first side of the passive device may be available to be electrically connected to a second device.
Public/Granted literature
- US20170018546A1 DUAL-SIDED SILICON INTEGRATED PASSIVE DEVICES Public/Granted day:2017-01-19
Information query
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