- Patent Title: Base material on which single-crystal diamond is grown comprised of a base substrate, bonded single-crystal MgO layer, and heteroepitaxial film, and method for manufacturing a single-crystal diamond substrate on the base material
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Application No.: US13159074Application Date: 2011-06-13
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Publication No.: US09752255B2Publication Date: 2017-09-05
- Inventor: Hitoshi Noguchi , Shozo Shirai
- Applicant: Hitoshi Noguchi , Shozo Shirai
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2010-145739 20100628; JP2010-162688 20100720; JP2010-264261 20101126
- Main IPC: C30B25/18
- IPC: C30B25/18 ; C30B29/04

Abstract:
A single-crystal diamond growth base material on which single-crystal diamond is grown having at least a base substrate of a material having a linear expansion coefficient smaller than that of MgO and not smaller than 0.5×10−6/K; a single-crystal MgO layer formed on a face of the base substrate where the single-crystal diamond is grown by a bonding method; and a film constituted of any one of an iridium film, a rhodium film, and a platinum film heteroepitaxially grown on the single-crystal MgO layer.
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