Methods of designing resist layers to enhance production accuracy, as well as respective layers, design files and metrology targets are disclosed. Continuous or uniform feature(s) adjacent to segmented feature(s) having a pitch and a critical dimension (CD), are configured by design to be segmented upon exposure at a same pitch and a smaller CD than the segmented feature(s), to yield respective unsegmented continuous feature(s) upon development of the exposed resist. The disclosed approach allows producing imaging and scatterometry targets which are compatible with device design rules and with optical constraints of the exposure system, without loss of contrast of the produced targets. The methods may be fine-tuned according to the specific characteristics of lithography tools which are used in the production.