DEVICE-LIKE METROLOGY TARGETS
    1.
    发明申请

    公开(公告)号:US20220197152A1

    公开(公告)日:2022-06-23

    申请号:US17689934

    申请日:2022-03-08

    Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

    SCATTEROMETRY OVERLAY METROLOGY TARGETS AND METHODS
    4.
    发明申请
    SCATTEROMETRY OVERLAY METROLOGY TARGETS AND METHODS 有权
    SCATTERMETRY OVERLAY计量目标和方法

    公开(公告)号:US20140351771A1

    公开(公告)日:2014-11-27

    申请号:US14457780

    申请日:2014-08-12

    Inventor: Nuriel Amir

    Abstract: Scatterometry overlay (SCOL) targets as well as design, production and measurement methods thereof are provided. The SCOL targets have several periodic structures at different measurement directions which share some of their structural target elements or parts thereof. An array of common elements may have symmetry directions which are parallel to the measurement directions and thus enable compacting the targets or alternatively increasing the area use efficiency of the targets. Various configurations enable high flexibility in arranging the number of layers in the target and measurement directions, and carrying out respective overlay measurements among the layers.

    Abstract translation: 提供了Scatterometry覆盖(SCOL)目标以及其设计,生产和测量方法。 SCOL目标在不同测量方向上具有几个周期性结构,其共享其一些结构目标元件或其部分。 公共元件的阵列可以具有与测量方向平行的对称方向,从而能够压实目标或者替代地增加目标的面积使用效率。 各种配置使得能够在目标和测量方向上布置层数的高度灵活性,并且在层之间执行相应的覆盖测量。

    Method and apparatus for direct self assembly in target design and production

    公开(公告)号:US10303835B2

    公开(公告)日:2019-05-28

    申请号:US14710201

    申请日:2015-05-12

    Abstract: Target designs methods and targets are provided, in which at least some of the differentiation between target elements and their background is carried out by segmenting either of them. Directed self-assembly (DSA) processes are used to generate fine segmentation, and various characteristics of the polymer lines and their guiding lines are used to differentiate target elements from their background. Target designs and design principles are disclosed in relation to the DSA process, as well as optimization of the DSA process to yield high metrology measurement accuracy in face of production inaccuracies. Furthermore, designs and methods are provided for enhancing and using ordered regions of a DSA-produced polymer surface as target elements and as hard masks for production processes. The targets and methods may be configured to enable metrology measurements using polarized light to distinguish target elements or DSA features.

    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY
    7.
    发明申请
    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY 有权
    使用散射测量方法的重点测量

    公开(公告)号:US20160103946A1

    公开(公告)日:2016-04-14

    申请号:US14974732

    申请日:2015-12-18

    Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

    Abstract translation: 提供了目标设计和方法,其涉及具有在第一方向上以第一间距重复的元件的周期性结构。 这些元件沿着与第一方向垂直的第二方向具有第二间距周期性,并且通过具有第二间距的交替的,聚焦敏感的和不对焦的图案在第二方向上表征。 在所产生的目标中,第一节距可以是关于装置间距,而第二节距可以是数倍。 可以产生第一个不对焦模式以产生第一临界尺寸,并且可以产生第二焦点敏感图案以仅在满足指定的焦点要求时产生可等于第一临界尺寸的第二临界尺寸, 或者基于沿着垂直方向的较长的间距来提供零和第一衍射级的散射测量。

    TARGET AND PROCESS SENSITIVITY ANALYSIS TO REQUIREMENTS
    8.
    发明申请
    TARGET AND PROCESS SENSITIVITY ANALYSIS TO REQUIREMENTS 审中-公开
    目标和过程灵敏度分析要求

    公开(公告)号:US20160042105A1

    公开(公告)日:2016-02-11

    申请号:US14919954

    申请日:2015-10-22

    Abstract: Systems and method are provided for analyzing target, process and metrology configuration sensitivities to a wide range of parameters, according to external requirements or inner development and verification needs. Systems comprise the following elements. An input module is arranged to receive parameters relating to targets, target metrology conditions and production processes, to generate target data. A metrology simulation unit is arranged to simulate metrology measurements of targets from the target data and to generate multiple metrics that quantify the simulated target measurements. A sensitivity analysis module is arranged to derive functional dependencies of the metrics on the parameters and to define required uncertainties of the parameters with respect to the derived functional dependencies. Finally, a target optimization module is arranged to rank targets and target metrology conditions with respect to the simulated target measurements.

    Abstract translation: 提供系统和方法,根据外部要求或内部开发和验证需求,将目标,过程和度量配置灵敏度分析到广泛的参数。 系统包括以下要素。 输入模块被布置成接收与目标相关的参数,目标计量条件和生产过程,以产生目标数据。 计量模拟单元被设置为模拟来自目标数据的目标的度量测量并且生成量化模拟目标测量的多个度量。 灵敏度分析模块被布置为导出度量对参数的功能依赖性并且相对于导出的功能依赖性来定义参数的所需不确定性。 最后,设置目标优化模块以对目标和目标计量条件进行相对于模拟目标测量的排序。

    PROCESS COMPATIBLE SEGMENTED TARGETS AND DESIGN METHODS
    9.
    发明申请
    PROCESS COMPATIBLE SEGMENTED TARGETS AND DESIGN METHODS 审中-公开
    过程兼容性目标和设计方法

    公开(公告)号:US20140307256A1

    公开(公告)日:2014-10-16

    申请号:US14234540

    申请日:2013-11-21

    Inventor: Nuriel Amir

    Abstract: Methods of designing metrology targets are provided, which comprise distinguishing target elements from their background area by segmenting the background area and optionally segmenting the target elements. The provided metrology targets may maintain a required feature size when measured yet be finely segmented to achieve process and design rules compatibility which results in higher accuracy of the metrology measurements. Particularly, all transitions between target features and adjacent background features may be designed to maintain a feature size of the features below a certain threshold.

    Abstract translation: 提供了设计计量目标的方法,其中包括通过分割背景区域和可选地分割目标元素来区分目标元素与其背景区域。 提供的测量目标可以在测量时保持所需的特征尺寸,并进行细分,以实现过程和设计规则的兼容性,从而导致计量测量的更高精度。 特别地,可以将目标特征和相邻背景特征之间的所有转换设计成将特征的特征尺寸维持在特定阈值之下。

    Device-like metrology targets
    10.
    发明授权

    公开(公告)号:US11709433B2

    公开(公告)日:2023-07-25

    申请号:US17689934

    申请日:2022-03-08

    CPC classification number: G03F7/70625 G03F7/70633 G03F7/70683

    Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

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