- 专利标题： Methods for manufacturing and operating a memory device and a method for operating a system having the same
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申请号： US14792727申请日： 2015-07-07
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公开(公告)号： US09753849B2公开(公告)日： 2017-09-05
- 发明人: Kui Yon Mun , Young Jin Cho , Young Kwang Yoo
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si, Gyeonggi-Do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-Do
- 代理机构： F. Chau & Associates, LLC
- 优先权： KR10-2014-0084678 20140707
- 主分类号： G06F12/00
- IPC分类号： G06F12/00 ; G06F13/00 ; G06F13/28 ; G06F12/02 ; G11C29/56 ; G06F9/44 ; G06F12/14 ; G06F9/445
摘要：
A method for manufacturing a memory device includes detecting, with a tester, whether memory cells included in a memory device are defective, and programming, with the tester, start addresses of defect-free memory regions for addressing modes of the memory device based on a result of the detection.
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