Invention Grant
- Patent Title: Methods for manufacturing and operating a memory device and a method for operating a system having the same
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Application No.: US14792727Application Date: 2015-07-07
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Publication No.: US09753849B2Publication Date: 2017-09-05
- Inventor: Kui Yon Mun , Young Jin Cho , Young Kwang Yoo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0084678 20140707
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28 ; G06F12/02 ; G11C29/56 ; G06F9/44 ; G06F12/14 ; G06F9/445
Abstract:
A method for manufacturing a memory device includes detecting, with a tester, whether memory cells included in a memory device are defective, and programming, with the tester, start addresses of defect-free memory regions for addressing modes of the memory device based on a result of the detection.
Public/Granted literature
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