公开(公告)号：US09753849B2

公开(公告)日：2017-09-05

申请号：US14792727

申请日：2015-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kui Yon Mun ,  Young Jin Cho ,  Young Kwang Yoo

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/28 ,  G06F12/02 ,  G11C29/56 ,  G06F9/44 ,  G06F12/14 ,  G06F9/445

CPC classification number: G06F12/0246 ,  G06F9/4401 ,  G06F9/445 ,  G06F12/14 ,  G06F12/1425 ,  G11C29/56008

Abstract: A method for manufacturing a memory device includes detecting, with a tester, whether memory cells included in a memory device are defective, and programming, with the tester, start addresses of defect-free memory regions for addressing modes of the memory device based on a result of the detection.