Method for writing and reading a plurality of data bits to a magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a reference magnetic layer having a reference magnetization, a tunnel barrier layer, and a SAF storage magnetic layer including a first and second storage magnetization being coupled antiparallel through a storage coupling layer and freely orientable at a high temperature threshold. The method includes: heating the magnetic tunnel junction to the high temperature threshold; and applying a write magnetic field to orient the first and second storage magnetization; wherein the high temperature threshold includes one of a first or third high temperature threshold such as to orient the first storage magnetization respectively antiparallel or parallel to the second storage magnetization; or a second high temperature threshold such as to orient the first storage magnetization with an angle below 180° with respect to the second storage magnetization.