发明授权
- 专利标题: Pattern forming method and actinic-ray- or radiation-sensitive resin composition
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申请号: US13642751申请日: 2011-05-20
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公开(公告)号: US09760003B2公开(公告)日: 2017-09-12
- 发明人: Kaoru Iwato , Hidenori Takahashi , Shuji Hirano , Sou Kamimura , Keita Kato
- 申请人: Kaoru Iwato , Hidenori Takahashi , Shuji Hirano , Sou Kamimura , Keita Kato
- 申请人地址: JP Tokyo
- 专利权人: FUJIFILM Corporation
- 当前专利权人: FUJIFILM Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2010-119755 20100525
- 国际申请: PCT/JP2011/062159 WO 20110520
- 国际公布: WO2011/149035 WO 20111201
- 主分类号: G03F7/039
- IPC分类号: G03F7/039 ; G03F7/004 ; G03F7/11 ; G03F7/20 ; G03F7/32 ; G03F7/40 ; G03F7/075
摘要:
Provided is a method of forming a pattern and an actinic-ray- or radiation-sensitive resin composition that excels in the limiting resolving power, roughness characteristics, exposure latitude (EL) and bridge defect performance. The method of forming a pattern includes (1) forming an actinic-ray- or radiation-sensitive resin composition into a film, (2) exposing the film to light, and (3) developing the exposed film with a developer containing an organic solvent. The actinic-ray- or radiation-sensitive resin composition contains (A) a resin containing a repeating unit with a structural moiety that is configured to decompose when exposed to actinic rays or radiation to thereby generate an acid, and (B) a solvent.
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