The present disclosure relates to semiconductor structures and, more particularly, to a self-aligned deep contact for a vertical field effect transistor (VFET) and methods of manufacture. The structure includes a plurality of fin structures, a first contact landing on a substrate material between a first set of fin structures of the plurality of fin structures, sidewalls of the first contact being in direct contact with an insulator material of the first set of the fin structures, and a second contact landing on a work function material between a second set of fin structures of the plurality of fin structures, sidewalls of the second contact being in direct contact with the insulator material of the second set of the fin structures.