Invention Grant
- Patent Title: Methods of forming semiconductor device structures including metal oxide structures
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Application No.: US15044713Application Date: 2016-02-16
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Publication No.: US09768021B2Publication Date: 2017-09-19
- Inventor: Dan B. Millward , Timothy A. Quick , J. Neil Greeley
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/326
- IPC: H01L21/326 ; H01L21/479 ; H01L21/027 ; B82Y10/00 ; B82Y40/00 ; C08L53/00 ; C09D153/00 ; G03F7/00 ; H01L21/28 ; H01L29/06 ; H01L21/02

Abstract:
Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.
Public/Granted literature
- US20160163536A1 METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES INCLUDING METAL OXIDE STRUCTURES Public/Granted day:2016-06-09
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