- 专利标题: Detection circuit for mixed asynchronous and synchronous memory operation
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申请号: US13308333申请日: 2011-11-30
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公开(公告)号: US09772969B2公开(公告)日: 2017-09-26
- 发明人: Simon J. Lovett
- 申请人: Simon J. Lovett
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dorsey & Whitney LLP
- 主分类号: G06F13/42
- IPC分类号: G06F13/42 ; G06F13/16 ; G11C11/413 ; G11C7/10 ; G11C11/406 ; G11C11/4076
摘要:
A memory access mode detection circuit and method for detecting and initiating memory access modes for a memory device The memory access mode detection circuit receives the memory address signals, the control signals, and the clock signal and generates a first mode detection signal in response to receipt of the memory address signals or a first combination of control signals. An first mode initiation signal is generated a time delay subsequent to the detection signal to initiate the first mode memory access operation. In response to receipt of a second combination of control signals and an active clock signal, the memory access mode detection circuit further generates a second mode detection signal to initiate a second mode memory access operation and to suppress generation of the first mode detection signal, thereby canceling the first mode memory access operation.
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