Invention Grant
- Patent Title: Memory device having self-aligned cell structure
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Application No.: US14790535Application Date: 2015-07-02
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Publication No.: US09773839B2Publication Date: 2017-09-26
- Inventor: Jun Liu , Michael P. Violette
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L21/311 ; H01L45/00 ; G11C11/56 ; H01L27/102 ; H01L21/02 ; H01L29/66 ; G11C13/00
Abstract:
Some embodiments include apparatus and methods having a memory device with diodes coupled to memory elements. Each diode may be formed in a recess of the memory device. The recess may have a polygonal sidewall. The diode may include a first material of a first conductivity type (e.g., n-type) and a second material of a second conductive type (e.g., p-type) formed within the recess.
Public/Granted literature
- US20150303239A1 MEMORY DEVICE HAVING SELF-ALIGNED CELL STRUCTURE Public/Granted day:2015-10-22
Information query
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