Invention Grant
- Patent Title: Asymmetric III-V MOSFET on silicon substrate
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Application No.: US15377722Application Date: 2016-12-13
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Publication No.: US09773903B2Publication Date: 2017-09-26
- Inventor: Cheng-Wei Cheng , Pranita Kerber , Effendi Leobandung , Amlan Majumdar , Renee T. Mo , Yanning Sun
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/535 ; H01L29/06 ; H01L29/32 ; H01L29/66 ; H01L21/311 ; H01L29/778
Abstract:
A semiconductor structure containing a high mobility semiconductor channel material, i.e., a III-V semiconductor material, and asymmetrical source/drain regions located on the sidewalls of the high mobility semiconductor channel material is provided. The asymmetrical source/drain regions can aid in improving performance of the resultant device. The source region contains a source-side epitaxial doped semiconductor material, while the drain region contains a drain-side epitaxial doped semiconductor material and an underlying portion of the high mobility semiconductor channel material.
Public/Granted literature
- US20170092763A1 ASYMMETRIC III-V MOSFET ON SILICON SUBSTRATE Public/Granted day:2017-03-30
Information query
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