Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15235242Application Date: 2016-08-12
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Publication No.: US09773919B2Publication Date: 2017-09-26
- Inventor: Shinya Sasagawa , Takashi Hamada , Akihisa Shimomura , Satoru Okamoto , Katsuaki Tochibayashi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2015-166557 20150826
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/423 ; H01L29/66 ; H01L21/4757 ; H01L21/4763 ; H01L21/465 ; H01L27/12
Abstract:
A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor.
Public/Granted literature
- US20170062619A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-03-02
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