Invention Grant
- Patent Title: Connecting memory cells to a data line sequentially while applying a program voltage to the memory cells
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Application No.: US15191786Application Date: 2016-06-24
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Publication No.: US09779819B1Publication Date: 2017-10-03
- Inventor: Qiang Tang , Ramin Ghodsi , Toru Tanzawa
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C16/12 ; G11C16/26 ; G11C16/34 ; G11C16/08

Abstract:
In an example, a programming method includes applying a program voltage to a selected access line commonly connected to a first memory cell of a first string of series-connected memory cells and to a second memory cell of a second string of series-connected memory cells while a data line is electrically connected to the first memory cell and electrically disconnected from the second memory cell, and while continuing to apply the program voltage to the selected access line, electrically disconnecting the data line from the first memory cell and subsequently electrically connecting the data line to the second memory cell.
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