- 专利标题： Method and structure for cut material selection
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申请号： US15263959申请日： 2016-09-13
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公开(公告)号： US09779944B1公开(公告)日： 2017-10-03
- 发明人: Sean D. Burns , Lawrence A. Clevenger , Matthew E. Colburn , Nelson M. Felix , Sivananda K. Kanakasabapathy , Yann A. M. Mignot , Christopher J. Penny , Roger A. Quon , Nicole A. Saulnier
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ryan, Mason & Lewis, LLP
- 代理商 Louis J. Percello
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/033
摘要：
A method for manufacturing a semiconductor device includes forming a plurality of mandrels on a dielectric layer, conformally depositing a spacer layer on the plurality of mandrels, removing a portion of the spacer layer from a top surface of at least one of the plurality of mandrels, removing the at least one of the plurality of mandrels to create at least one opening, and filling the at least opening with a cut fill material, wherein the cut fill material comprises the same material as a material of the spacer layer.
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