Aspects of the present invention relate to approaches for forming a narrow source-drain contact in a semiconductor device. A contact trench can be etched to a source-drain region of the semiconductor device. A titanium liner can be deposited in this contact trench such that it covers substantially an entirety of the bottom and walls of the contact trench. An x-metal layer can be deposited over the titanium liner on the bottom of the contact trench. A titanium nitride liner can then be formed on the walls of the contact trench. The x-metal layer prevents the nitriding of the titanium liner on the bottom of the contact trench during the formation of the nitride liner.