公开(公告)号：US09779987B2

公开(公告)日：2017-10-03

申请号：US14314670

申请日：2014-06-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Min Gyu Sung ,  Kwanyong Lim ,  Hiroaki Niimi

IPC: H01L21/768 ,  H01L23/485 ,  H01L21/285 ,  H01L29/417 ,  H01L23/532

CPC classification number: H01L21/76846 ,  H01L21/28518 ,  H01L21/76855 ,  H01L21/76856 ,  H01L23/485 ,  H01L23/53266 ,  H01L29/41766 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Aspects of the present invention relate to approaches for forming a narrow source-drain contact in a semiconductor device. A contact trench can be etched to a source-drain region of the semiconductor device. A titanium liner can be deposited in this contact trench such that it covers substantially an entirety of the bottom and walls of the contact trench. An x-metal layer can be deposited over the titanium liner on the bottom of the contact trench. A titanium nitride liner can then be formed on the walls of the contact trench. The x-metal layer prevents the nitriding of the titanium liner on the bottom of the contact trench during the formation of the nitride liner.

公开(公告)号：US10854510B2

公开(公告)日：2020-12-01

申请号：US15687455

申请日：2017-08-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Min Gyu Sung ,  Kwanyong Lim ,  Hiroaki Niimi

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  H01L29/417 ,  H01L23/485

Abstract: Aspects of the present invention relate to approaches for forming a narrow source-drain contact in a semiconductor device. A contact trench can be etched to a source-drain region of the semiconductor device. A titanium liner can be deposited in this contact trench such that it covers substantially an entirety of the bottom and walls of the contact trench. An x-metal layer can be deposited over the titanium liner on the bottom of the contact trench. A titanium nitride liner can then be formed on the walls of the contact trench. The x-metal layer prevents the nitriding of the titanium liner on the bottom of the contact trench during the formation of the nitride liner.

公开(公告)号：US09847333B2

公开(公告)日：2017-12-19

申请号：US15051420

申请日：2016-02-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kwanyong Lim ,  Murat Kerem Akarvardar

IPC: H01L29/16 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/167

CPC classification number: H01L27/0924 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823892 ,  H01L29/167

Abstract: Reducing a chance of punch-through in a FinFET structure includes providing a substrate, creating a blanket layer of semiconductor material with impurities therein over the substrate, masking a portion of the blanket layer, creating epitaxial semiconductor material on an unmasked portion of the structure, removing the mask, and etching the structure to create n-type raised structure(s) and p-type raised structure(s), a bottom portion of the raised structure(s) being surrounded by isolation material. A middle portion of the raised structure(s) includes a semiconductor material with impurities therein, the middle portion extending across the raised structure(s), and a top portion including a semiconductor material lacking added impurities.

公开(公告)号：US20170372949A1

公开(公告)日：2017-12-28

申请号：US15687455

申请日：2017-08-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Min Gyu Sung ,  Kwanyong Lim ,  Hiroaki Niimi

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/485 ,  H01L29/417 ,  H01L23/532

CPC classification number: H01L21/76846 ,  H01L21/28518 ,  H01L21/76855 ,  H01L21/76856 ,  H01L23/485 ,  H01L23/53266 ,  H01L29/41766 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Aspects of the present invention relate to approaches for forming a narrow source-drain contact in a semiconductor device. A contact trench can be etched to a source-drain region of the semiconductor device. A titanium liner can be deposited in this contact trench such that it covers substantially an entirety of the bottom and walls of the contact trench. An x-metal layer can be deposited over the titanium liner on the bottom of the contact trench. A titanium nitride liner can then be formed on the walls of the contact trench. The x-metal layer prevents the nitriding of the titanium liner on the bottom of the contact trench during the formation of the nitride liner.

公开(公告)号：US20170358585A1

公开(公告)日：2017-12-14

申请号：US15182487

申请日：2016-06-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kwanyong Lim ,  Ryan Ryoung-han Kim ,  Ruilong Xie

IPC: H01L27/11 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/311 ,  H01L29/40 ,  H01L21/321

Abstract: At least one method, apparatus and system disclosed herein involves processing a semiconductor wafer using block mask design for manufacturing a finFET device. The gate structure comprising a source structure, and a drain structure of a transistor is formed. The gate structure is surrounded by an inter-layer dielectric (ILD) region. A 1st and a 2nd hard mask (HM) layer is formed above the gate structure and the ILD region. A 1st and 2nd block mask of a 1st and 2nd color are respectively formed. The 1st and 2nd HM layers are selectively etched based on the 1st and 2nd block mask layers for forming spaces for metal deposition. A contact metal deposition process is performed for forming a plurality of contact metal features. The 1st and 2nd HM layers are removed. A 3rd etch process is performed for etching back the contact metal features to form contact metal structures.

公开(公告)号：US20150380304A1

公开(公告)日：2015-12-31

申请号：US14314670

申请日：2014-06-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Min Gyu Sung ,  Kwanyong Lim ,  Hiroaki Niimi

IPC: H01L21/768 ,  H01L23/532 ,  H01L29/66

CPC classification number: H01L21/76846 ,  H01L21/28518 ,  H01L21/76855 ,  H01L21/76856 ,  H01L23/485 ,  H01L23/53266 ,  H01L29/41766 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Aspects of the present invention relate to approaches for forming a narrow source-drain contact in a semiconductor device. A contact trench can be etched to a source-drain region of the semiconductor device. A titanium liner can be deposited in this contact trench such that it covers substantially an entirety of the bottom and walls of the contact trench. An x-metal layer can be deposited over the titanium liner on the bottom of the contact trench. A titanium nitride liner can then be formed on the walls of the contact trench. The x-metal layer prevents the nitriding of the titanium liner on the bottom of the contact trench during the formation of the nitride liner.

Abstract translation: 本发明的方面涉及在半导体器件中形成窄源极 - 漏极接触的方法。 可以将接触沟槽蚀刻到半导体器件的源极 - 漏极区域。 可以在该接触沟槽中沉积钛衬里，使得其覆盖接触沟槽的基本上整个底部和壁。 可以在接触沟槽的底部上的钛衬垫上沉积x-金属层。 然后可以在接触沟槽的壁上形成氮化钛衬垫。 在形成氮化物衬垫期间，x-金属层防止了接触沟槽底部的钛衬里的氮化。