Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15450037Application Date: 2017-03-06
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Publication No.: US09779998B2Publication Date: 2017-10-03
- Inventor: Chia-Chen Tsai , Hung-Chang Chang , Ta-Kang Lo , Tsai-Fu Chen , Shang-Jr Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW105103612A 20160203
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/8234 ; H01L21/8238 ; H01L27/092 ; H01L29/78
Abstract:
A method of manufacturing a semiconductor device is provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.
Public/Granted literature
- US20170221766A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-08-03
Information query
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