Invention Grant
- Patent Title: Silicon microstructuring method and microbattery
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Application No.: US14470827Application Date: 2014-08-27
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Publication No.: US09780366B2Publication Date: 2017-10-03
- Inventor: Mohamed Boufnichel , Jean-Christophe Houdbert
- Applicant: STMicroelectronics (Tours) SAS
- Applicant Address: FR Tours
- Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee Address: FR Tours
- Agency: Slater Matsil, LLP
- Priority: FR1358256 20130829
- Main IPC: H01M4/38
- IPC: H01M4/38 ; H01L31/0236 ; H01M4/04 ; H01M4/134 ; H01M4/1395 ; C09K13/00 ; H01L21/3065 ; H01M4/02
Abstract:
A method for forming a rough silicon wafer including the successive steps of: performing a plasma etching of a surface of the wafer in conditions suitable to obtain a rough structure, and performing two successive ion milling steps, one at an incidence in the range of 0 to 10°, the other at an incidence in the range of 40 to 60° relative to the normal to the wafer.
Public/Granted literature
- US20150064567A1 SILICON MICROSTRUCTURING METHOD AND MICROBATTERY Public/Granted day:2015-03-05
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