公开(公告)号：US09780366B2

公开(公告)日：2017-10-03

申请号：US14470827

申请日：2014-08-27

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mohamed Boufnichel ,  Jean-Christophe Houdbert

IPC: H01M4/38 ,  H01L31/0236 ,  H01M4/04 ,  H01M4/134 ,  H01M4/1395 ,  C09K13/00 ,  H01L21/3065 ,  H01M4/02

CPC classification number: H01M4/386 ,  C09K13/00 ,  H01L21/3065 ,  H01L31/0236 ,  H01L31/02363 ,  H01M4/049 ,  H01M4/134 ,  H01M4/1395 ,  H01M2004/021 ,  H01M2004/027

Abstract: A method for forming a rough silicon wafer including the successive steps of: performing a plasma etching of a surface of the wafer in conditions suitable to obtain a rough structure, and performing two successive ion milling steps, one at an incidence in the range of 0 to 10°, the other at an incidence in the range of 40 to 60° relative to the normal to the wafer.