- 专利标题： Method for evaluating semiconductor film and method for manufacturing semiconductor device
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申请号： US14855648申请日： 2015-09-16
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公开(公告)号： US09786495B2公开(公告)日： 2017-10-10
- 发明人: Akihisa Shimomura , Naoki Okuno , Mitsuhiro Ichijo , Noriyoshi Suzuki , Tetsuhiro Tanaka , Sachiaki Tezuka
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2014-191058 20140919
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/66 ; H01J37/32 ; C23C14/08 ; C23C14/58
摘要：
A method for evaluating a semiconductor film of a semiconductor device which is configured to include an insulating film, the semiconductor film, and a conductive film and to have a region where the semiconductor film and the conductive film overlap with each other with the insulating film provided therebetween, includes a step of performing plasma treatment after formation of the insulating film, and a step of calculating a peak value of resistivity of a microwave in the semiconductor film by a microwave photoconductive decay method after the plasma treatment, so that the hydrogen concentration in the semiconductor film is estimated.
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