Invention Grant
- Patent Title: Method of fabricating flash memory device
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Application No.: US14734287Application Date: 2015-06-09
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Publication No.: US09793155B2Publication Date: 2017-10-17
- Inventor: Ho-Jun Seong , Jee-hoon Han
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0108453 20140820
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L21/768 ; H01L21/28 ; H01L21/3213 ; H01L27/11519 ; H01L27/11524 ; H01L27/11531 ; H01L21/033 ; H01L27/11565 ; H01L27/1157 ; H01L27/11573
Abstract:
A method of fabricating a memory device includes forming an etching object layer and a lower sacrificial layer on a substrate, and forming an upper sacrificial pattern structure on the lower sacrificial layer. The upper sacrificial pattern structure includes a pad portion and a line portion on the lower sacrificial layer. An upper spacer is formed by covering a side wall of the upper sacrificial pattern structure. A lower sacrificial pattern structure including a lower sacrificial pad portion and a lower sacrificial line portion is formed by etching the lower sacrificial layer, by using the upper sacrificial pad portion and the upper spacer as a mask. A lower spacer layer is formed by covering the lower sacrificial pattern structure. A lower mask pattern including at least one line mask, bridge mask, and pad mask, is formed by etching the lower spacer layer and the lower sacrificial pattern structure.
Public/Granted literature
- US20160056170A1 METHOD OF FABRICATING FLASH MEMORY DEVICE Public/Granted day:2016-02-25
Information query
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