Invention Grant
- Patent Title: Etch stop for airgap protection
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Application No.: US15342440Application Date: 2016-11-03
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Publication No.: US09793157B2Publication Date: 2017-10-17
- Inventor: Kangguo Cheng , Ruilong Xie , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/768 ; H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/417 ; H01L21/28 ; H01L23/522 ; H01L29/51 ; H01L21/8238
Abstract:
A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides of the channel region. The semiconductor device may further include a composite gate sidewall spacer present on a sidewall of the gate structure. The composite gate sidewall spacer may include a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid and present atop the first composition portion.
Public/Granted literature
- US20170125284A1 ETCH STOP FOR AIRGAP PROTECTION Public/Granted day:2017-05-04
Information query
IPC分类:
