Invention Grant
- Patent Title: Crucible for growing sapphire single crystal, and method for producing crucible for growing sapphire single crystal
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Application No.: US14430591Application Date: 2013-09-12
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Publication No.: US09803291B2Publication Date: 2017-10-31
- Inventor: Masahiro Katoh , Makoto Watanabe
- Applicant: A.L.M.T. Corp.
- Applicant Address: JP Tokyo
- Assignee: A.L.M.T. Corp.
- Current Assignee: A.L.M.T. Corp.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-217115 20120928
- International Application: PCT/JP2013/074641 WO 20130912
- International Announcement: WO2014/050585 WO 20140403
- Main IPC: C30B11/02
- IPC: C30B11/02 ; C30B11/00 ; C30B29/20 ; C30B35/00 ; C23C4/02 ; C23C4/08 ; C23C4/12 ; C23C4/18 ; F27D5/00

Abstract:
An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.
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