摘要:
The ratio of the coarse grain region in the side wall in the thickness direction thereof is 10% or more and less than 90%. The coarse grain region is defined as such a region in which crystal grains having a grain size of 1 mm or more determined by an intercept method in the height direction of the crucible occupy 95% or more of an area of a measurement region, and the fine grain region is defined as such a region in which crystal grains having a grain size of 10 μm or more and 500 μm or less determined by the intercept method in the height direction of the crucible occupy 95% or more of the area of the measurement region.
摘要:
An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.
摘要:
A Mo—Si—B-based alloy for a heat-resistant alloy that satisfies, more than conventional, physical properties such as proof stress and hardness adapted to an increase in the melting point of 5 a welding object. The Mo—Si—B-based alloy powder is such that the full width at half maximum of (600) of Mo5SiB2 in X-ray diffraction peak data is 0.08 degrees or more and 0.7 degrees or less.
摘要:
Provided is a Mo—Si—B-based alloy for a heat-resistant alloy that satisfies, more than conventional, physical properties such as proof stress and hardness adapted to an increase in the melting point of a welding object.A Mo—Si—B-based alloy powder of this invention is such that the full width at half maximum of (600) of Mo5SiB2 in X-ray diffraction peak data is 0.08 degrees or more and 0.7 degrees or less.
摘要:
The molybdenum crucible includes a cylindrical side wall and a bottom provided integrally with one end of the side wall. The side wall includes a coarse grain region configured to extend from an outer wall toward an inner wall and a fine grain region configured to extend from the inner wall toward the outer wall so as to be in contact with the coarse grain region. The ratio of the coarse grain region in the side wall in the thickness direction thereof is 10% or more and less than 90%. The coarse grain region is defined as such a region in which crystal grains having a grain size of 1 mm or more determined by an intercept method in the height direction of the crucible occupy 95% or more of an area of a measurement region.
摘要:
An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.