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公开(公告)号：US20230002882A1
公开(公告)日：2023-01-05
申请号：US17841892
申请日：2022-06-16
申请人： Comadur SA
发明人： Pierry VUILLE , Alexis BOULMAY
摘要： A method for treating a jewel of the monocrystalline or polycrystalline type (20), in particular for the watchmaking industry, the jewel (20) including a body (23) defining the shape thereof. The method includes a step of ion implantation on the surface (24) of at least a part of the body (23) to modify the roughness of the surface (24).
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公开(公告)号：US20220380933A1
公开(公告)日：2022-12-01
申请号：US17755241
申请日：2020-10-25
申请人： CHINA PETROLEUM & CHEMICAL CORPORATION , DALIAN RESEARCH INSTITUTE OF PETROLEUM AND PETROCHEMICALS, SINOPEC CORP.
发明人： Weiya YANG , Baokuan SUI , Fengxiang LING , Huicheng ZHANG , Shaojun WANG , Zhiqi SHEN
摘要： An alumina grain has a single-crystal structure and has an approximate regular octahedral stereoscopic morphology. Eight sides of the alumina grain belong to the {111} family of crystal planes of γ-state alumina, and the grain size is 5-100 μm. The alumina grain is unique in crystal plane exposure and distribution, simple and feasible in preparation, and low in cost, and has higher operability, and thus has good application prospect in the field of catalysis and adsorption.
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公开(公告)号：US20220235487A1
公开(公告)日：2022-07-28
申请号：US17611748
申请日：2020-05-15
申请人： Kennametal Inc.
发明人： Zhenyu LIU
摘要： In one aspect, methods of making coated articles are described herein. A method, in some embodiments, comprises providing a substrate, and depositing a coating by chemical vapor deposition (CVD) and/or physical vapor deposition (PVD) over a surface of the substrate, the coating comprising at least one polycrystalline layer, wherein one or more CVD and/or PVD conditions are selected to induce one or more properties of the polycrystalline layer. The presence of the one or more properties in the polycrystalline layer is quantified by two-dimensional (2D) X-ray diffraction analysis.
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公开(公告)号：US20210226002A1
公开(公告)日：2021-07-22
申请号：US17256402
申请日：2019-06-21
申请人： FLOSFIA INC.
发明人： Isao TAKAHASHI , Takashi SHINOHE
摘要： The disclosure provides a crystalline oxide film that has reduced defects such as dislocations due to a reduced facet growth. Also, the disclosure provides a crystalline oxide film that is useful for semiconductor devices and has an enhanced crystal quality. A crystalline oxide film, including: an epitaxial layer having a corundum structure, the lateral growth area is substantially free from a facet growth area, a growth direction of the lateral growth area that is c-axis direction or substantially c-axis direction, the lateral growth area including a dislocation line extending to the c-axis direction or substantially c-axis direction, a first crystal oxide and a second crystal oxide bonded to each other, that are crystal-grown in a direction parallel or approximately parallel to the x-axis.
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公开(公告)号：US10858759B2
公开(公告)日：2020-12-08
申请号：US16079733
申请日：2017-02-23
申请人： A.L.M.T. Corp.
IPC分类号： C30B35/00 , C30B29/20 , C22F1/18 , F27B14/10 , F27D1/00 , C22F1/00 , B22F5/00 , B22F3/12 , C22C1/04
摘要： The molybdenum crucible includes a cylindrical side wall and a bottom provided integrally with one end of the side wall. The side wall includes a coarse grain region configured to extend from an outer wall toward an inner wall and a fine grain region configured to extend from the inner wall toward the outer wall so as to be in contact with the coarse grain region. The ratio of the coarse grain region in the side wall in the thickness direction thereof is 10% or more and less than 90%. The coarse grain region is defined as such a region in which crystal grains having a grain size of 1 mm or more determined by an intercept method in the height direction of the crucible occupy 95% or more of an area of a measurement region.
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公开(公告)号：US10774002B2
公开(公告)日：2020-09-15
申请号：US15956898
申请日：2018-04-19
申请人： NGK INSULATORS, LTD.
发明人： Kei Sato , Takahiro Maeda , Morimichi Watanabe , Tsutomu Nanataki
IPC分类号： C04B35/115 , C04B35/10 , C04B35/622 , C04B35/645 , C01F7/02 , C04B35/632 , C04B35/638 , C04B35/634 , C30B29/20 , C30B28/02 , C30B1/04 , C01F7/30 , C30B1/12
摘要： A method for producing an oriented sintered body according to the present invention includes the steps of: (a) preparing a multilayer body, the multilayer body including a layer including a fine raw-material powder and a layer including a plate-like raw-material powder which are alternately stacked each other, particles of the plate-like raw-material powder being arranged such that surfaces of the particles of the plate-like raw-material powder extend along a surface of the layer including a fine raw-material powder; and (b) sintering the multilayer body.
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公开(公告)号：US10766784B2
公开(公告)日：2020-09-08
申请号：US16232033
申请日：2018-12-25
申请人： Wuhan University
发明人： Shengwen Tang , Wenzhi Yu , Wei Zhou , Yang Li , Hubao A
摘要： A method of preparation of semiconductor material. The method includes: adding an organic substance containing a benzene ring and dodecacalcium hepta-aluminate (12CaO.7Al2O3 or C12A7) to a test tube, and sealing the test tube; heating the test tube to a temperature of 200-300° C., and holding the temperature for 1 to 3 hours; and continuously heating the test tube to a temperature of 900-1300° C., and holding the temperature for 10-120 hours.
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公开(公告)号：US20200048790A1
公开(公告)日：2020-02-13
申请号：US16498987
申请日：2018-03-30
申请人： KYOCERA Corporation
发明人： Ichiro SAKANO , Keiji YUKIHIRO
摘要： A tubular sapphire member of the present disclosure is a tubular body made of sapphire, including: an outer wall extending in an axial direction; a plurality of through holes extending in the axial direction; and one or more partition walls extending in the axial direction and dividing the plurality of through holes, wherein the axial direction is parallel to a c-axis of sapphire, at least one of the partition walls extends from a central axis toward the outer wall and is connected with the outer wall in a front view seen in the axial direction, and an extending direction of the partition wall is parallel to either an a-axis or an m-axis of sapphire.
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公开(公告)号：US20200003949A1
公开(公告)日：2020-01-02
申请号：US16544198
申请日：2019-08-19
摘要： Provided is a cladded single crystal sapphire optical device (e.g., a s sapphire optical fiber or wafer). In one embodiment, the innovation provides a method for forming a cladding in a single crystal sapphire optical device by reactor irradiation. The reactor irradiation creates ions external to the optical device that enter the optical device, displace atoms in the optical device, and are implanted in the optical device, thus modifying the index of refraction of the optical device near the surface of the optical device and creating a cladding in the sapphire optical device.
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公开(公告)号：US10222123B2
公开(公告)日：2019-03-05
申请号：US14744893
申请日：2015-06-19
申请人： APPLE INC.
发明人： Matthew S. Rogers , Christopher D. Jones , Dale N. Memering , Alexander M. Hoffman , Ping Chung Chen , Chien-Wei Huang
摘要： A system for heat treating sapphire components to increase strength while maintaining the optical finish and/or transparency of the component. The system may include a fixture positioned in a furnace and configured to suspend an array or group of sapphire components. The fixture may include notches or other features to assist in locating and positioning the sapphire components. Shield elements or enclosures may also be interspersed with the sapphire components and may help produce a more uniform heat distribution and protect the sapphire components from emissions or deposits. Some aspects are directed to a sleeve tool and fixture jig that can be used to assemble the sapphire components onto the fixture in a way that reduces the risk of marring or otherwise damaging the sapphire components.
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