Invention Grant
- Patent Title: High voltage multiple channel LDMOS
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Application No.: US14965182Application Date: 2015-12-10
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Publication No.: US09806074B2Publication Date: 2017-10-31
- Inventor: Yongxi Zhang , Sameer P. Pendharkar
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L27/092 ; H01L27/088 ; H01L21/8238 ; H01L21/265 ; H01L21/324 ; H01L21/762 ; H01L29/06 ; H01L29/10 ; H01L29/167 ; H01L21/225 ; H01L21/266 ; H01L29/08
Abstract:
An integrated circuit and method having an LDMOS transistor with multiple current channels. A first current channel is above a buried p-type diffusion and a second one current channel is below the buried p-type diffusion.
Public/Granted literature
- US20160093612A1 HIGH VOLTAGE MULTIPLE CHANNEL LDMOS Public/Granted day:2016-03-31
Information query
IPC分类:
