- 专利标题： Microstructured electrode structures
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申请号： US15133385申请日： 2016-04-20
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公开(公告)号： US09806331B2公开(公告)日： 2017-10-31
- 发明人: Ashok Lahiri , Robert M. Spotnitz , Nirav S. Shah , Murali Ramasubramanian , Harrold J. Rust, III , James D. Wilcox , Michael J. Armstrong , Brian E. Brusca , Christopher G. Castledine , Laurie J. Lauchlan
- 申请人： Enovix Corporation
- 申请人地址： US CA Fremont
- 专利权人： ENOVIX CORPORATION
- 当前专利权人： ENOVIX CORPORATION
- 当前专利权人地址： US CA Fremont
- 代理机构： Bryan Cave LLP
- 主分类号： H01M4/13
- IPC分类号： H01M4/13 ; H01M4/134 ; H01M10/052 ; H01M4/1395 ; H01M4/38 ; H01G4/32 ; H01G4/008 ; H01G4/012 ; H01G4/015 ; H01M4/80 ; H01M10/04 ; H01M10/0525 ; H01M10/054 ; H01M10/0564 ; H01M4/70 ; H01M4/02 ; B82Y30/00
摘要：
A structure for use in an energy storage device, the structure comprising a backbone system extending generally perpendicularly from a reference plane, and a population of microstructured anodically active material layers supported by the lateral surfaces of the backbones, each of the microstructured anodically active material layers having a void volume fraction of at least 0.1 and a thickness of at least 1 micrometer.
公开/授权文献
- US20160233486A1 MICROSTRUCTURED ELECTRODE STRUCTURES 公开/授权日：2016-08-11
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