Invention Grant
- Patent Title: Test architecture of semiconductor device, test system, and method of testing semicondurctor devices at wafer level
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Application No.: US15231862Application Date: 2016-08-09
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Publication No.: US09824946B2Publication Date: 2017-11-21
- Inventor: Young-Yong Byun , Ho-Sung Song , Chi-Wook Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2015-0177919 20151214
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/78 ; H01L23/544 ; G01R31/28

Abstract:
A method of manufacturing a semiconductor chip from a wafer having a test architecture includes forming a plurality of dies on a wafer, each of the plurality of dies including a semiconductor device, forming at least two common pads commonly coupled to the dies, the at least two common pads being formed in a scribe lane, the scribe lane distinguishing the dies with respect to each other, and simultaneously testing the semiconductor devices at a wafer level, using the at least two common pads.
Public/Granted literature
Information query
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