- Patent Title: Method for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip for the production of a radiation-emitting semiconductor component, and radiation-emitting semiconductor component
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Application No.: US14428896Application Date: 2013-09-16
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Publication No.: US09831390B2Publication Date: 2017-11-28
- Inventor: Ion Stoll , Sebastian Taeger , Hans-Christoph Gallmeier , Gudrun Lindberg , Stefan Hartauer
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102012108704 20120917
- International Application: PCT/EP2013/069151 WO 20130916
- International Announcement: WO2014/041165 WO 20140320
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L33/44 ; H01L33/46 ; H01L33/50 ; H01L33/62

Abstract:
A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.
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