- 专利标题: Method for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip for the production of a radiation-emitting semiconductor component, and radiation-emitting semiconductor component
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申请号: US14428896申请日: 2013-09-16
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公开(公告)号: US09831390B2公开(公告)日: 2017-11-28
- 发明人: Ion Stoll , Sebastian Taeger , Hans-Christoph Gallmeier , Gudrun Lindberg , Stefan Hartauer
- 申请人: OSRAM Opto Semiconductors GmbH
- 申请人地址: DE Regensburg
- 专利权人: OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人: OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人地址: DE Regensburg
- 代理机构: Slater Matsil, LLP
- 优先权: DE102012108704 20120917
- 国际申请: PCT/EP2013/069151 WO 20130916
- 国际公布: WO2014/041165 WO 20140320
- 主分类号: H01L29/22
- IPC分类号: H01L29/22 ; H01L33/44 ; H01L33/46 ; H01L33/50 ; H01L33/62
摘要:
A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.
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