- 专利标题： Method for forming a semiconductor device and semiconductor device
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申请号： US14706435申请日： 2015-05-07
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公开(公告)号： US09847229B2公开(公告)日： 2017-12-19
- 发明人: Hans-Joachim Schulze , Johannes Laven
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 优先权： DE102014106594 20140509
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/225 ; H01L21/266 ; H01L27/04 ; H01L29/36 ; H01L21/265 ; H01L29/66 ; H01L29/739 ; H01L29/861
摘要：
A method for forming a semiconductor device includes depositing an epitaxial layer on a semiconductor substrate, forming an oxygen diffusion region within the epitaxial layer by oxygen diffusion from the semiconductor substrate into a part of the epitaxial layer and tempering at least the oxygen diffusion region of the epitaxial layer at a temperature between 400° C. and 480° C. for more than 15 minutes.
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