Invention Grant
- Patent Title: Systems, methods and devices for programming a multilevel resistive memory cell
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Application No.: US15354822Application Date: 2016-11-17
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Publication No.: US09852794B2Publication Date: 2017-12-26
- Inventor: Paolo Fantini , Massimo Ferro
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C11/56
Abstract:
Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.
Public/Granted literature
- US20170069381A1 SYSTEMS, METHODS AND DEVICES FOR PROGRAMMING A MULTILEVEL RESISTIVE MEMORY CELL Public/Granted day:2017-03-09
Information query
