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公开(公告)号：US10431302B2
公开(公告)日：2019-10-01
申请号：US16158852
申请日：2018-10-12
Applicant: Micron Technology, Inc.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
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2.发明申请SYSTEMS, METHODS AND DEVICES FOR PROGRAMMING A MULTILEVEL RESISTIVE MEMORY CELL 有权用于编程多电阻存储器单元的系统，方法和器件公开(公告)号：US20160064078A1
公开(公告)日：2016-03-03
申请号：US14936186
申请日：2015-11-09
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Paolo Fantini , Massimo Ferro
CPC classification number: G11C13/0069 , G11C11/56 , G11C11/5678 , G11C13/0002 , G11C13/0004 , G11C13/0097 , G11C2013/0073 , G11C2013/0092 , G11C2213/15
Abstract: Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.
Abstract translation: 本文公开的实施例可以涉及具有包括正向偏置和反向偏置编程脉冲的编程脉冲序列的多电平存储器单元的编程。
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3.发明申请公开(公告)号：US20150357038A1
公开(公告)日：2015-12-10
申请号：US14827024
申请日：2015-08-14
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C2213/52
Abstract: Memory cells, devices and methods are disclosed, including those that involve applying a waveform to a resistive memory cell to program the memory cell to an over-reset state representing a logic value.
Abstract translation: 公开了存储器单元，器件和方法，包括涉及向电阻存储器单元施加波形以将存储器单元编程为表示逻辑值的过复位状态的存储器单元，器件和方法。
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公开(公告)号：US20200066344A1
公开(公告)日：2020-02-27
申请号：US16671123
申请日：2019-10-31
Applicant: Micron Technology, Inc.
Inventor： Paolo Fantini , Massimo Ferro
Abstract: Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.
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公开(公告)号：US09852794B2
公开(公告)日：2017-12-26
申请号：US15354822
申请日：2016-11-17
Applicant: Micron Technology, Inc.
Inventor： Paolo Fantini , Massimo Ferro
CPC classification number: G11C13/0069 , G11C11/56 , G11C11/5678 , G11C13/0002 , G11C13/0004 , G11C13/0097 , G11C2013/0073 , G11C2013/0092 , G11C2213/15
Abstract: Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.
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Patent Agency Ranking
公开(公告)号：US09530497B2
公开(公告)日：2016-12-27
申请号：US14936186
申请日：2015-11-09
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Paolo Fantini , Massimo Ferro
CPC classification number: G11C13/0069 , G11C11/56 , G11C11/5678 , G11C13/0002 , G11C13/0004 , G11C13/0097 , G11C2013/0073 , G11C2013/0092 , G11C2213/15
Abstract: Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.
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公开(公告)号：US20140098593A1
公开(公告)日：2014-04-10
申请号：US13647527
申请日：2012-10-09
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Alessandro Calderoni , Massimo Ferro , Paolo Fantini
IPC: G11C11/00
CPC classification number: G11C13/004 , G11C11/00 , G11C11/5678 , G11C13/0002 , G11C13/0004 , G11C13/0035 , G11C13/0069 , G11C13/0097 , G11C29/006 , G11C29/50008 , G11C2013/0052 , G11C2013/0057
Abstract: The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.
Abstract translation: 本公开包括包括电阻变化存储器中的漂移加速度的装置和方法。 许多实施例包括将编程信号施加到电阻可变存储单元以将该单元编程到目标状态，随后将预读信号施加到电阻可变存储单元以加速编程单元电阻的漂移，以及 随后向电阻变化存储单元施加读取信号。
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公开(公告)号：US20180130530A1
公开(公告)日：2018-05-10
申请号：US15853423
申请日：2017-12-22
Applicant: Micron Technology, Inc.
Inventor： Paolo Fantini , Massimo Ferro
CPC classification number: G11C13/0069 , G11C11/56 , G11C11/5678 , G11C13/0002 , G11C13/0004 , G11C13/0097 , G11C2013/0073 , G11C2013/0092 , G11C2213/15
Abstract: Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.
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公开(公告)号：US20170345495A1
公开(公告)日：2017-11-30
申请号：US15624551
申请日：2017-06-15
Applicant: Micron Technology, Inc.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
IPC: G11C13/00
CPC classification number: G11C13/0064 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0066 , G11C2013/0076 , G11C2013/0083 , G11C2013/0092
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
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公开(公告)号：US09711214B2
公开(公告)日：2017-07-18
申请号：US14941365
申请日：2015-11-13
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
CPC classification number: G11C13/0064 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0066 , G11C2013/0076 , G11C2013/0083 , G11C2013/0092
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
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