Various embodiments provide systems, computer program products and computer implemented methods. In some embodiments, a system includes a computer-implemented method of determining a laterally diffuse dopant profile in semiconductor structures by providing first and second semiconductor structures having plurality of gate array structures in a silicided region separated from each other by a first distance and second distance. A potential difference is applied across the plurality of gate array structures and resistances are determined. A linear-regression fit is performed on measured resistance versus the first distance and the second distance with an extrapolated x equals 0 and a y-intercept to determine a laterally diffused dopant-profile under the plurality of gate array structures based on a semiconductor device model.