- 专利标题： III-V lateral bipolar junction transistor
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申请号： US15092224申请日： 2016-04-06
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公开(公告)号： US09865714B2公开(公告)日： 2018-01-09
- 发明人: Pouya Hashemi , Tak H. Ning , Alexander Reznicek
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/66 ; H01L29/735 ; H01L29/205 ; H01L29/08 ; H01L29/04 ; H01L29/737 ; H01L29/20 ; H01L21/02 ; H01L21/265 ; H01L21/308 ; H01L21/306 ; H01L29/207
摘要：
A lateral bipolar junction transistor (LBJT) device that includes an intrinsic III-V semiconductor material having a first band gap; and a base region present on the intrinsic III-V semiconductor material. The base region is composed of an III-V semiconductor material having a second band gap that is less than the first band gap. Emitter and collector regions present on opposing sides of the base region. The emitter and collector regions are composed of epitaxial III-V semiconductor material that is present on the intrinsic III-V semiconductor material.
公开/授权文献
- US20170294525A1 III-V LATERAL BIPOLAR JUNCTION TRANSISTOR 公开/授权日：2017-10-12
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