Through-silicon via (TSV) crack sensors for detecting TSV cracks in three-dimensional (3D) integrated circuits (ICs) (3DICs), and related methods and systems
Abstract:
Through-silicon via (TSV) crack sensors for detecting TSV cracks in three-dimensional (3D) integrated circuits (ICs) (3DICs), and related methods and systems are disclosed. In one aspect, a TSV crack sensor circuit is provided in which doped rings for a plurality of TSVs are interconnected in parallel such that all interconnected TSV doped rings may be tested at the same time by providing a single current into the contacts of the interconnected doped rings. In another aspect, a TSV crack sensor circuit is provided including one or more redundant TSVs. Each doped ring for a corresponding TSV is tested independently, and a defective TSV may be replaced with a spare TSV whose doped ring is not detected to be cracked. This circuit allows for correction of a compromised 3DIC by replacing possibly compromised TSVs with spare TSVs.
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