Invention Grant
- Patent Title: Semiconductor memory device including output buffer
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Application No.: US15460206Application Date: 2017-03-15
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Publication No.: US09881665B2Publication Date: 2018-01-30
- Inventor: Hiromasa Takeda , Hiroki Fujisawa
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2014-027370 20140217
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C11/4093 ; G11C11/4074 ; G11C11/4094

Abstract:
An apparatus includes a first terminal configured to communicate data with an outside of the apparatus, a second terminal configured to receive a first power source potential, a third terminal configured to receive a second power source potential lower than the first power source potential, a fourth terminal configured to be coupled to a calibration resistor, an output buffer including first to third nodes coupled to the first to third terminals respectively, and a replica circuit including fourth and fifth nodes coupled to the second and third terminals respectively, and sixth node coupled to the fourth terminal.
Public/Granted literature
- US20170186479A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING OUTPUT BUFFER Public/Granted day:2017-06-29
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