SEMICONDUCTOR MEMORY DEVICE INCLUDING OUTPUT BUFFER
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE INCLUDING OUTPUT BUFFER 有权
    半导体存储器件,包括输出缓冲器

    公开(公告)号:US20150235680A1

    公开(公告)日:2015-08-20

    申请号:US14622520

    申请日:2015-02-13

    Abstract: An apparatus includes a first terminal configured to communicate data with an outside of the apparatus, a second terminal configured to receive a first power source potential, a third terminal configured to receive a second power source potential lower than the first power source potential, a fourth terminal configured to be coupled to a calibration resistor, an output buffer including first to third nodes coupled to the first to third terminals respectively, and a replica circuit including fourth and fifth nodes coupled to the second and third terminals respectively, and sixth node coupled to the fourth terminal.

    Abstract translation: 一种装置包括:第一终端,被配置为与设备的外部通信数据;第二终端,被配置为接收第一电源电位;第三终端,被配置为接收低于第一电源电位的第二电源电位;第四终端, 被配置为耦合到校准电阻器的输出缓冲器,包括分别耦合到第一至第三端子的第一至第三节点的输出缓冲器以及分别耦合到第二和第三端子的第四和第五节点的复制电路,以及耦合到 第四个终端。

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