Graphene FET with graphitic interface layer at contacts

Invention Grant

US09882008B2 Graphene FET with graphitic interface layer at contacts 有权

Patent Title: Graphene FET with graphitic interface layer at contacts
Application No.: US14933872

Application Date: 2015-11-05
Publication No.: US09882008B2

Publication Date: 2018-01-30
Inventor: Luigi Colombo , Archana Venugopal
Applicant: Texas Instruments Incorporated
Applicant Address: US TX Dallas
Assignee: TEXAS INSTRUMENTS INCORPORATED
Current Assignee: TEXAS INSTRUMENTS INCORPORATED
Current Assignee Address: US TX Dallas
Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
Main IPC: H01L29/06
IPC: H01L29/06 ; H01L29/16 ; H01L29/786 ; H01L51/00 ; H01L51/05 ; H01L29/66 ; H01L29/45 ; H01L21/02 ; H01L29/778 ; H01L29/51

Abstract:

A method for forming a graphene FET includes providing a graphene layer having a surface. A first metal layer having a work function

Public/Granted literature

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的