Invention Grant
- Patent Title: Forming defect-free relaxed SiGe fins
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Application No.: US15197892Application Date: 2016-06-30
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Publication No.: US09882052B2Publication Date: 2018-01-30
- Inventor: Robert Judson Holt , Jinping Liu , Jody Fronheiser , Bharat Krishnan , Churamani Gaire , Timothy James McArdle , Murat Kerem Akarvardar
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L29/78 ; H01L21/265 ; H01L21/324 ; H01L21/762 ; H01L21/02 ; H01L27/088
Abstract:
A method of forming defect-free relaxed SiGe fins is provided. Embodiments include forming fully strained defect-free SiGe fins on a first portion of a Si substrate; forming Si fins on a second portion of the Si substrate; forming STI regions between adjacent SiGe fins and Si fins; forming a cladding layer over top and side surfaces of the SiGe fins and the Si fins and over the STI regions in the second portion of the Si substrate; recessing the STI regions on the first portion of the Si substrate, revealing a bottom portion of the SiGe fins; implanting dopant into the Si substrate below the SiGe fins; and annealing.
Public/Granted literature
- US20180006155A1 FORMING DEFECT-FREE RELAXED SIGE FINS Public/Granted day:2018-01-04
Information query
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