Invention Grant
- Patent Title: Semiconductor device for reducing an instantaneous voltage drop
-
Application No.: US15467230Application Date: 2017-03-23
-
Publication No.: US09886997B2Publication Date: 2018-02-06
- Inventor: Tae Hyung Kim , Sang Yeop Baeck , Jae Young Kim , Jin Sung Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonnggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonnggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0188844 20141224
- Main IPC: G11C11/413
- IPC: G11C11/413 ; G11C7/12 ; G11C8/10 ; G11C5/06 ; H01L23/528 ; H01L27/02 ; H01L27/092 ; H01L27/11

Abstract:
A semiconductor device for reducing an instantaneous voltage drop is provided. The semiconductor device includes a first power line configured to provide a first power supply voltage and a first power transistor connected between the first power line and a first logic transistor. The first power transistor includes a first source or drain connected to the first power line, a gate receiving a power gating control signal, and a second source or drain connected to a first source or drain of the first logic transistor using a shared semiconductor junction.
Public/Granted literature
- US20170194041A1 SEMICONDUCTOR DEVICE FOR REDUCING AN INSTANTANEOUS VOLTAGE DROP Public/Granted day:2017-07-06
Information query
IPC分类: