- 专利标题： Silicon germanium source/drain regions
-
申请号： US14609107申请日： 2015-01-29
-
公开(公告)号： US09887290B2公开(公告)日： 2018-02-06
- 发明人: Ji-Yin Tsai , Yao-Tsung Huang , Chih-Hsin Ko , Clement Hsingjen Wann
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238 ; H01L29/10 ; H01L29/06 ; H01L29/08 ; H01L29/161 ; H01L29/167 ; H01L29/36 ; H01L29/66
摘要：
A method includes forming a gate stack over a semiconductor region, and recessing the semiconductor region to form a recess adjacent the gate stack. A silicon-containing semiconductor region is epitaxially grown in the recess to form a source/drain stressor. Arsenic is in-situ doped during the step of epitaxially growing the silicon-containing semiconductor region.
公开/授权文献
- US20150137198A1 In-Situ Doping of Arsenic for Source and Drain Epitaxy 公开/授权日：2015-05-21
信息查询
IPC分类:
