Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15191542Application Date: 2016-06-24
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Publication No.: US09887293B2Publication Date: 2018-02-06
- Inventor: Zhibiao Zhou , Ding-Lung Chen , Chen-Bin Lin , Sanpo Wang , Chung-Yuan Lee , Chi-Fa Ku
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW105115666A 20160520
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L29/792 ; H01L29/788

Abstract:
A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a dielectric layer, a first gate electrode, a second gate electrode and a charge storage structure. The oxide-semiconductor layer is disposed on the first gate electrode on the substrate. The source/drain regions are disposed on the oxide-semiconductor layer. The first dielectric layer covers on the oxide-semiconductor layer and source/drain regions. A second gate electrode is disposed between source/drain regions and partially covers the oxide-semiconductor layer. The oxide-semiconductor layer may be optionally disposed between the first gate electrode and the oxide-semiconductor layer or be disposed on the second gate electrode.
Public/Granted literature
- US20170338351A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-11-23
Information query
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