A non-volatile memory device comprises: a memory cell array that includes one or more memory groups each including memory cells, each of the memory cells having variable resistance value to hold a piece of data; a read circuit that, for each of the one or more memory groups, performs a read operation to obtain pieces of time information related to the memory cells in the memory group; and a data generation circuit that generates individual identification information on a basis of order of the memory cells in each of the one or more memory groups, the order corresponding to ascending order or descending order of the pieces of time information related to the memory cells in the memory group. The read circuit obtains each of the pieces of time information on a basis of a discharge phenomenon or charge phenomenon that depends on the resistance value of a corresponding one of the memory cells.