- 专利标题: Thick film resistor and production method for same
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申请号: US15119653申请日: 2015-08-20
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公开(公告)号: US09892828B2公开(公告)日: 2018-02-13
- 发明人: Hiroshi Mashima , Yukari Morofuji
- 申请人: Shoei Chemical Inc.
- 申请人地址: JP Shinjuku-ku, Tokyo
- 专利权人: SHOEI CHEMICAL INC.
- 当前专利权人: SHOEI CHEMICAL INC.
- 当前专利权人地址: JP Shinjuku-ku, Tokyo
- 代理机构: Flynn, Thiel, Boutell & Tanis, P.C.
- 优先权: JP2014-185800 20140912
- 国际申请: PCT/JP2015/073358 WO 20150820
- 国际公布: WO2016/039108 WO 20160317
- 主分类号: H01B1/14
- IPC分类号: H01B1/14 ; H01C7/00 ; H01B1/08 ; H01B1/20 ; C03C3/089 ; C03C4/14 ; C03C8/02 ; C03C8/18 ; C09D11/03 ; C09D11/52 ; H01C7/02 ; H01C17/065 ; C03C3/068 ; C03C3/072 ; C03C3/074 ; C03C3/085 ; C03C3/087 ; C03C3/091 ; C03C3/093 ; C03C3/105 ; C03C3/108 ; C03C8/04 ; C03C8/10 ; C03C8/22
摘要:
A thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The thick film resistor is formed of a fired product of a resistive composition, wherein the thick film resistor contains ruthenium-based conductive particles containing ruthenium dioxide and a glass component essentially free of a lead component and has a resistance value in the range of 100Ω/□ to 10 MΩ/□ and a temperature coefficient of resistance within ±100 ppm/° C.
公开/授权文献
- US20170011825A1 THICK FILM RESISTOR AND PRODUCTION METHOD FOR SAME 公开/授权日:2017-01-12
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