Invention Grant
- Patent Title: Ebeam three beam aperture array
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Application No.: US15122400Application Date: 2014-12-19
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Publication No.: US09897908B2Publication Date: 2018-02-20
- Inventor: Yan A. Borodovsky , Donald W. Nelson , Mark C. Phillips
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- International Application: PCT/US2014/071665 WO 20141219
- International Announcement: WO2015/191105 WO 20151217
- Main IPC: G03F1/20
- IPC: G03F1/20 ; G03F7/20 ; H01J37/30 ; H01J37/04 ; H01J37/317 ; H01J37/302 ; H01L21/768
Abstract:
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.
Public/Granted literature
- US20170076905A1 EBEAM THREE BEAM APERTURE ARRAY Public/Granted day:2017-03-16
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