Invention Grant
- Patent Title: Multiple layer FePt structure
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Application No.: US15376043Application Date: 2016-12-12
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Publication No.: US09899050B2Publication Date: 2018-02-20
- Inventor: Jiaoming Qiu , Yonghua Chen , Ganping Ju , Thomas P. Nolan
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hall Estill Attorneys at Law
- Main IPC: G11B5/84
- IPC: G11B5/84 ; G11B5/85 ; C21D1/26 ; B32B15/01 ; C22C5/04 ; C22F1/14 ; C23C14/16 ; C23C14/34 ; C23C14/35 ; C23C14/22 ; C23C14/28 ; C23C14/58 ; G11B5/65 ; G11B5/73 ; G11B5/851

Abstract:
One embodiment described herein is directed to a method involving depositing a seed layer on a substrate, the seed layer comprising A1 phase FePt with a ratio of Pt of Fe greater than 1:1. A main layer is deposited on the seed layer, the main layer comprising A1 phase FePt with a ratio of Pt to Fe of approximately 1:1. A cap layer is deposited on the main layer, the cap layer comprising A1 phase FePt with a ratio of Pt to Fe of less than 1:1. The seed, main and cap layers are annealed to convert the A1 phase FePt to L10 phase FePt having a graded FePt structure of varying stoichimetry from approximately Fe50Pt50 adjacent a lower portion of the structure proximate the substrate to Fe>50Pt
Public/Granted literature
- US20170092317A1 Multiple Layer FEPT Structure Public/Granted day:2017-03-30
Information query
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